IRF7306TRPbF 2*P-MOSFET SO8 IR

Opis produktu


    IRF7306, IR - tranzystor 2 xP-MOSFET HEXFET®

• I_d - _{Continuous Drain Current}: 3.6 A
• V_{ds - Drain-Source Breakdown Voltage}: 30 V
• V_{gs - Gate-Source Voltage}: - 20 V, + 20 V
• R_{ds On - Drain-Source Resistance}: 100 mOhms
• Qg - Gate Charge: 16.7 nC
• Package/Case: SOIC-8
• factory pack: 4000pcs