HGTG40N60A4 tranz. IGBT ONSemi

Opis produktu

HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. -55°C~175°C

• V_CES :      600V
• I_C :          @ TC = 25^oC:  75A;      @ TC = 110^oC:  63A   
• V_GES:     ±20V          
• P_D :         @ TC = 25^oC 625W, @ TC = 100^oC 117W
• Qg :        390nC