Opis produktu
HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. -55°C~175°C
- VCES : 600V
- IC : @ TC = 25oC: 75A; @ TC = 110oC: 63A
- VGES: ±20V
- PD : @ TC = 25oC 625W, @ TC = 100oC 117W
- Qg : 390nC
