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          HGTG40N60A4 tranz. IGBT ONSemi HGTG40N60A4 tranz. IGBT ONSemi
          HGTG40N60A4 tranz. IGBT ONSemi
          HGTG40N60A4 tranz. IGBT ONSemi

          HGTG40N60A4 tranz. IGBT ONSemi

          Brutto: 55,00
          44,72

          Opis produktu

          HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. -55°C~175°C

          • VCES :      600V
          • IC :          @ TC = 25oC:  75A;      @ TC = 110oC:  63A   
          • VGES:     ±20V          
          • PD :         @ TC = 25oC 625W, @ TC = 100oC 117W
          • Qg :        390nC

          Specyfikacja produktu

          montaż: THT
          typ tranzystora: N-MOSFET
          napięcie CE: 600V
          prąd kolektora: 75A
          npięcie DS: 600V
          moc rozpraszana: 300W
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