Opis produktu
HGTG40N60A4 ON, SMPS N-Channel IGBT , 600V, 75A TO247. MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. 100kHz Operation At 390V, 40A
- BVCES : 600V
- V CE(sat) = 1.7 V @ I C = 40A
- IC25 : 75A
- IC110 : 63A
- PD : 625W
- Tf : 55ns at TJ = 125°C
- Qg: 450nC
- TJ : -55 - +150°C
- RθCS :0,2°C/W
