Opis produktu
AUIRF1010EZSTRL - Infineon, Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating
Produkt wycofany ze sprzedaży, oststnie 4 szt
- ID : 75A @ 250C
- VDS :60V
- VGS : ± 20V
- RDS(on) : 6,8mΩ
- Qg: 58nC
- opakowanie ; rolka 800szt
